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RFP12N10L |
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| Part Number | RFP12N10L |
| Manufacturer | Fairchild Semiconductor |
| Description | Data Sheet RFP12N10L October 2013 N-Channel Logic Level Power MOSFET 100 V, 12 A, 200 mΩ These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for us... |
| Features |
• 12A, 100V • rDS(ON) = 0.200Ω • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Symbol D Packaging G S DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE ©2005 Fairchild Semiconductor Corporation RFP12N10L Rev. C0 RFP12N10L Absolute Maximum Ratings TC = 25oC, Un... |
| Document |
 RFP12N10L Data Sheet
PDF 414.31KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RFP12N10 |
Intersil Corporation |
12A/ 80V and 100V/ 0.200 Ohm/ N-Channel Power MOSFETs |
|
| 2 | RFP12N10L |
Intersil Corporation |
12A/ 100V/ 0.200 Ohm/ Logic Level/ N-Channel Power MOSFET |
|
| 3 | RFP12N18 |
Intersil Corporation |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs |
|
| 4 | RFP12N06 |
Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
|
| 5 | RFP12N06RLE |
Fairchild Semiconductor |
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET |
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