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RM600DY-66S |
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| Part Number | RM600DY-66S |
| Manufacturer | Powerex Power Semiconductors |
| Description | PRE . ation nge. pecific to cha final s subject a t o is n limits are is h e: T tric Notice parame Som ARY LIMIN MITSUBISHI FAST RECOVERY DIODE MODULE RM600DY-66S HIGH POWER, HIGH SPEED SWITCHING ... |
| Features |
High Voltage Diode) Module
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol VRRM VDRM VR(DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 66 3300 3300 2200 Unit V V V
Symbol IDC IFMS I 2t Tj Tstg Viso — —
Parameter DC current Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolation Voltage Mounting torque Weight
Conditions TC =25°C 1 cycle of half wave 60Hz, peak value, Tj = 25°C start, VRM = 0V Value of one cycle surge current, tW = 8.3ms, Tj = 25°C start — — Main terminal to case,... |
| Document |
 RM600DY-66S Data Sheet
PDF 41.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RM6004R |
GROUP-TEK |
Power Transformers |
|
| 2 | RM60CZ-24 |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 3 | RM60CZ-2H |
Mitsubishi Electric Semiconductor |
HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 4 | RM60CZ-H |
Mitsubishi Electric Semiconductor |
MEDIUM POWER GENERAL USE INSULATED TYPE |
|
| 5 | RM60CZ-M |
Mitsubishi Electric Semiconductor |
MEDIUM POWER GENERAL USE INSULATED TYPE |
|