VN0300L |
Part Number | VN0300L |
Manufacturer | Motorola Inc |
Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by VN0300L/D TMOS FET Transistor N–Channel — Enhancement 2 GATE 3 DRAIN VN0300L Motorola Preferred Device 1 SOURCE ... |
Features |
µA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125°C) Gate –Body Leakage (VDS = 0, VGS = ±30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) On –State Drain Current(1) (VDS = VGS, ID = 1.0 mA) Drain –Source On Resistance(1) (VGS = 5.0 V, ID = 0.3 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 m s, Duty Cycle V(BR)DSS IDSS — — IGSS VGS(th) ID(on) rDS(on) — — gfs 200 3.3 1.2 — mS — 0.8 1.0 10 500 ±100 2.5 — nA V A Ω 30 — V µA v 2.0%. TMOS is a registered trademark of Motorola, Inc. Pre... |
Document |
VN0300L Data Sheet
PDF 71.71KB |
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