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IRF9130 |
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| Part Number | IRF9130 |
| Manufacturer | Intersil Corporation |
| Description | IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced po... |
| Features |
• -12A, -100V • rDS(ON) = 0.30Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol D Ordering Information PART NUMBER IRF9130 PACKAGE TO-204AA BRAND IRF9130 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF9130 A... |
| Document |
 IRF9130 Data Sheet
PDF 58.50KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF9130 |
Samsung semiconductor |
P-Channel Power MOSFET |
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| 2 | IRF9130 |
Seme LAB |
P-Channel Power MOSFET |
|
| 3 | IRF9130 |
International Rectifier |
P-Channel Power MOSFET |
|
| 4 | IRF9130SMD |
Seme LAB |
P-Channel Power MOSFET |
|
| 5 | IRF9131 |
Samsung semiconductor |
P-Channel Power MOSFET |
|