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IRF640N |
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| Part Number | IRF640N |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast... |
| Features |
t possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
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Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Si... |
| Document |
 IRF640N Data Sheet
PDF 236.22KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IRF640 |
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| 2 | IRF640 |
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| 3 | IRF640 |
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