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IRF630A |
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| Part Number | IRF630A |
| Manufacturer | Fairchild Semiconductor |
| Description | Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.)
1 2 3
IRF630A
BVDSS = 200 V RDS(on) = 0.4 Ω ID = 9 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Ava... |
| Document |
 IRF630A Data Sheet
PDF 257.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF630 |
STMicroelectronics |
N-channel MOSFET |
|
| 2 | IRF630 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 3 | IRF630 |
Vishay |
Power MOSFET |
|
| 4 | IRF630 |
Inchange Semiconductor |
N-channel mosfet transistor |
|
| 5 | IRF630 |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
|