IRF620B |
Part Number | IRF620B |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
Features |
• • • • • • 5.0A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRF620B 200 5.0 3.2 18 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS620B 5.0 * 3.2 * 18 * 65 5.0 4.7 5.5 Units V A A A... |
Document |
IRF620B Data Sheet
PDF 875.32KB |
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