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IRF620 |
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| Part Number | IRF620 |
| Manufacturer | Intersil Corporation |
| Description | IRF620 Data Sheet June 1999 File Number 1577.3 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET desi... |
| Features |
• 5.0A, 200V • rDS(ON) = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF620 NOTE: PACKAGE TO-220AB BRAND IRF620 Symbol D When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-196 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://... |
| Document |
 IRF620 Data Sheet
PDF 54.98KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRF620 |
Inchange Semiconductor |
N-Channel Mosfet Transistor |
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| 2 | IRF620 |
STMicroelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
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| 3 | IRF620 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
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| 4 | IRF620 |
TRANSYS Electronics |
Power MOSFET |
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| 5 | IRF620 |
Vishay |
Power MOSFET |
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