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IRF540NS |
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| Part Number | IRF540NS |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
e applications.
G
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mount)**
www.irf.com
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| Document |
 IRF540NS Data Sheet
PDF 271.04KB |
| Distributor | Stock | Price | Buy |
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