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IRF530N |
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| Part Number | IRF530N |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The IRF530N is supplied ... |
| Features |
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications: • d.c. to d.c. converters • switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 1 2 3 gate source drain LIMITING VALUES Limiting values in accordance wi... |
| Document |
 IRF530N Data Sheet
PDF 97.03KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF530 |
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| 2 | IRF530 |
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| 3 | IRF530 |
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| 4 | IRF530 |
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