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IRF3205S |
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| Part Number | IRF3205S |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switchin... |
| Features |
available for low-profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient (PCB mounted, ... |
| Document |
 IRF3205S Data Sheet
PDF 280.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3205 |
Thinki Semiconductor |
N-Channel Trench Process Power MOSFET Transistor |
|
| 2 | IRF3205 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | IRF3205 |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3205 |
nELL |
N-Channel Power MOSFET |
|
| 5 | IRF3205A |
nELL |
N-Channel Power MOSFET |
|