IRF233 |
Part Number | IRF233 |
Manufacturer | Intersil Corporation |
Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdo... |
Features |
• 8.0A and 9.0A, 150V and 200V • rDS(ON) = 0.4Ω and 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF230 IRF231 IRF232 IRF233 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF230 IRF231 IRF232 IRF233 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: Thes... |
Document |
IRF233 Data Sheet
PDF 69.66KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRF230 |
Samsung semiconductor |
N-Channel Power MOSFET | |
2 | IRF230 |
Seme LAB |
N-Channel Power MOSFET | |
3 | IRF230 |
Intersil Corporation |
N-Channel Power MOSFET | |
4 | IRF230 |
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N-Channel Power MOSFET | |
5 | IRF230 |
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