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SH702 |
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| Part Number | SH702 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver an... |
| Features |
low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 90.0 Watts Push - Pull Package Style AH HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Device Dissipation 190 Watts Junction to Case Thermal Resistance o 0.85 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V
11.5 A
RF CHARACTERISTICS (
SYMBOL ... |
| Document |
 SH702 Data Sheet
PDF 36.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SH7020 |
Hitachi |
RISC Engine Manual |
|
| 2 | SH7020 |
Renesas |
SuperH microcomputer Hardware Manual |
|
| 3 | SH7021 |
Hitachi |
RISC Engine Manual |
|
| 4 | SH7021 |
Renesas |
SuperH microcomputer Hardware Manual |
|
| 5 | SH703 |
Polyfet RF Devices |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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