SKM200GB124D ETC IGBT Datasheet, en stock, prix

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SKM200GB124D

ETC
SKM200GB124D
SKM200GB124D SKM200GB124D
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Part Number SKM200GB124D
Manufacturer ETC
Description Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IG...
Features
• MOS input (voltage controlled)
• N channel, homogeneous Silicon structure NPT-IGBT (Non punch through)
• Low saturation voltage
• Low inductance case
• Low tail current with low temperature dependence
• High short circuit capability, self limiting to 6 * Icnom
• Latch-up free
• Fast & soft inverse CAL diodes 8)
• Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould
• Large clearance (12 mm) and creepage distances (20 mm) Typical Applications → B 6
  – 161
• Switching (not for linear use)
• Inverter drives
• UPS 1) 2) 3) 8) Inverse Diode 8) IF = 150 A VGE = 0...

Document Datasheet SKM200GB124D Data Sheet
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