SKM200GB124D |
Part Number | SKM200GB124D |
Manufacturer | ETC |
Description | Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = –IC IFM = –ICM IFSM I 2t RGE = 20 kΩ Tcase = 25/85 °C Tcase = 25/85 °C; tp = 1 ms per IG... |
Features |
• MOS input (voltage controlled) • N channel, homogeneous Silicon structure NPT-IGBT (Non punch through) • Low saturation voltage • Low inductance case • Low tail current with low temperature dependence • High short circuit capability, self limiting to 6 * Icnom • Latch-up free • Fast & soft inverse CAL diodes 8) • Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould • Large clearance (12 mm) and creepage distances (20 mm) Typical Applications → B 6 – 161 • Switching (not for linear use) • Inverter drives • UPS 1) 2) 3) 8) Inverse Diode 8) IF = 150 A VGE = 0... |
Document |
SKM200GB124D Data Sheet
PDF 131.47KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM200GB124 |
ETC |
IGBT | |
2 | SKM200GB123D |
Semikron |
IGBT | |
3 | SKM200GB123D1 |
Semikron |
IGBT | |
4 | SKM200GB125D |
Semikron International |
IGBT | |
5 | SKM200GB126D |
Semikron International |
IGBT |