Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
K6F1616T6B-F |
Click to view a larger image
| Part Number | K6F1616T6B-F |
| Manufacturer | Samsung semiconductor |
| Description | The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention vo... |
| Features |
• Process Technology: Full CMOS • Organization: 1M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipatio... |
| Document |
 K6F1616T6B-F Data Sheet
PDF 199.14KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | K6F1616T6B-EF55 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 2 | K6F1616T6B-EF70 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 3 | K6F1616T6B-TF55 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 4 | K6F1616T6B-TF70 |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|
| 5 | K6F1616T6B |
Samsung semiconductor |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
|