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JANTXV2N6806 |
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| Part Number | JANTXV2N6806 |
| Manufacturer | International Rectifier |
| Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-... |
| Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery TJ Operating Junction and TSTG... |
| Document |
 JANTXV2N6806 Data Sheet
PDF 828.17KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | JANTXV2N6800 |
International Rectifier |
POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A) |
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| 2 | JANTXV2N6802 |
International Rectifier |
POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=2.5A) |
|
| 3 | JANTXV2N6804 |
International Rectifier |
TRANSISTORS P-CHANNEL(Vdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) |
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| 4 | JANTXV2N6804 |
International Rectifier |
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.30ohm/ Id=-11A) |
|
| 5 | JANTXV2N6845 |
International Rectifier |
POWER MOSFET P-CHANNEL(BVdss=-100V/ Rds(on)=0.60ohm/ Id=-4.0A) |
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