JANTXV2N6770 International Rectifier N-Channel Transistor Datasheet, en stock, prix

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JANTXV2N6770

International Rectifier
JANTXV2N6770
JANTXV2N6770 JANTXV2N6770
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Part Number JANTXV2N6770
Manufacturer International Rectifier
Description HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-...
Features
 Repetitive Avalanche Ratings
 Dynamic dv/dt Rating
 Hermetically Sealed
 Simple Drive Requirements
 ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery  TJ Operating Junction and TSTG ...

Document Datasheet JANTXV2N6770 Data Sheet
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