JANTX2N6770 |
Part Number | JANTX2N6770 |
Manufacturer | International Rectifier |
Description | HEXFET® MOSFET technology is the key to IR Hirel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-... |
Features |
Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery TJ Operating Junction and TSTG ... |
Document |
JANTX2N6770 Data Sheet
PDF 802.85KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | JANTX2N6756 |
International Rectifier |
N-Channel Transistor | |
2 | JANTX2N6758 |
International Rectifier |
N-CHANNEL TRANSISTORS | |
3 | JANTX2N6760 |
International Rectifier |
POWER MOSFET N-CHANNEL | |
4 | JANTX2N6760 |
International Rectifier |
TRANSISTORS N-CHANNEL | |
5 | JANTX2N6762 |
International Rectifier |
POWER MOSFET N-CHANNEL |