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Features
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PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A4, October 2002
KSH350
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
1000
-10
VCE = -10V
IC = 10 IB
hFE, DC CURRENT GAIN
100
-1
V BE(sat)
10
-0.1
VCE(sat)
1 -1 -10 -100 -1000
-0.01 -1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
-1000
24
ICP(max)
21
IC[mA], COLLECTOR CURRENT
IC(max)
PC[W], POWER DISSIPATION
10 0µ s s 50 0µ
18
1m
-100
15
s
DC
12
...
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KSH350 Data Sheet
