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2SC5022 |
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| Part Number | 2SC5022 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Abso... |
| Features |
• High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150 –55 to +150 Unit V V V mA mA W °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer r... |
| Document |
 2SC5022 Data Sheet
PDF 34.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC5021 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 2 | 2SC5022 |
Renesas |
Silicon NPN Transistor |
|
| 3 | 2SC5023 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 4 | 2SC5024 |
Hitachi Semiconductor |
Silicon NPN Epitaxial Type Transistor |
|
| 5 | 2SC5025 |
Hitachi |
Silicon NPN Transistor |
|