2SC4747 |
Part Number | 2SC4747 |
Manufacturer | Hitachi Semiconductor |
Description | 2SC4747 Silicon NPN Triple Diffused Application Character display horizontal deflection output Feature • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.3 µs Outline TO-3PFM 1. ... |
Features |
age Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time V(BR)EBO ICES hFE VCE(sat) VBE(sat) tf
2
2SC4747
Maximum Collector Dissipation Curve 60 Collector power dissipation Pc (W)
40
20
0
50 100 Case Temperature TC (°C) Area of Safe Operation
150
20
(100 V, 20 A)
f = 64 kHz Ta = 25°C
Collector Current IC (A)
16
For picture tube arcing
12
8
4
(800 V, 4 A) 0.5 mA 400 800 1,200 1,600 2,000 Collector to emitter Voltage VCE (V)
0
Typical Output Characteristics 10
0 2. A
1.8
A
Collector Current I... |
Document |
2SC4747 Data Sheet
PDF 32.02KB |
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