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FQU7N10 |
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| Part Number | FQU7N10 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD7N10 / FQU7N10 100 5.8 3.67 23.2 ± 25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C ... |
| Document |
 FQU7N10 Data Sheet
PDF 544.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQU7N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 2 | FQU7N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQU7N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQU7N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 5 | FQU7P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET |
|