FQU30N06L |
Part Number | FQU30N06L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • • 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (No... |
Document |
FQU30N06L Data Sheet
PDF 649.71KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQU30N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
2 | FQU3N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
3 | FQU3N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET | |
4 | FQU3N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
5 | FQU3N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |