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FQU2N60 |
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| Part Number | FQU2N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD2N60 / FQU2N60 600 2.0 1.26 8.0 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/... |
| Document |
 FQU2N60 Data Sheet
PDF 561.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQU2N60C |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FQU2N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 3 | FQU2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET |
|
| 4 | FQU2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 5 | FQU2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|