FQU20N06LE |
Part Number | FQU20N06LE |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • • 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers • Built-in ESD Protection Diode D D G G S D-PAK FQD Series I-PAK G D S FQU Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curr... |
Document |
FQU20N06LE Data Sheet
PDF 656.13KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQU20N06L |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | FQU20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET | |
3 | FQU24N08 |
Fairchild Semiconductor |
80V N-Channel MOSFET | |
4 | FQU2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET | |
5 | FQU2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |