FQU10N20L |
Part Number | FQU10N20L |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
Features |
• • • • • • • 7.6A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD10N20L / FQU10N20L 200 7.6 4.8 30.... |
Document |
FQU10N20L Data Sheet
PDF 576.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQU10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
2 | FQU10N20 |
INCHANGE |
N-Channel MOSFET | |
3 | FQU10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
4 | FQU11P06 |
Fairchild Semiconductor |
60V P-Channel MOSFET | |
5 | FQU12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |