FQPF33N10 |
Part Number | FQPF33N10 |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• • • • • • • 18A, 100V, RDS(on) = 0.052Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQPF33N10 100 18 12.7 72 ±25 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A ... |
Document |
FQPF33N10 Data Sheet
PDF 591.99KB |
Distributor | Stock | Price | Buy |
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1 | FQPF33N10L |
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2 | FQPF30N06 |
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3 | FQPF30N06L |
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4 | FQPF32N12V2 |
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