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FQI10N60C |
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| Part Number | FQI10N60C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB10N60C / FQI10N60C 600 9.5 3.3 38 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A ... |
| Document |
 FQI10N60C Data Sheet
PDF 614.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQI10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | FQI10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQI10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQI11N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 5 | FQI11N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|