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FQB12N60 |
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| Part Number | FQB12N60 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB12N60 / FQI12N60 600 10.5 6.7 42 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V W W... |
| Document |
 FQB12N60 Data Sheet
PDF 540.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQB12N65 |
Oucan Semi |
12A N-Channel MOSFET |
|
| 2 | FQB12N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQB12N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |
|
| 4 | FQB12N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQB12P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET |
|