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FQB10N20L |
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| Part Number | FQB10N20L |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • • 10A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 13 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct operation from logic drivers D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB10N20L / FQI10N20L 200 10 6.3 ... |
| Document |
 FQB10N20L Data Sheet
PDF 574.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQB10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 2 | FQB10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 3 | FQB10N50CF |
ON Semiconductor |
N-Channel MOSFET |
|
| 4 | FQB10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 5 | FQB10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|