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FQA9N90 |
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| Part Number | FQA9N90 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• • • • • • 8.6A, 900V, RDS(on) = 1.3Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA9N90 900 8.6 5.45 34.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage... |
| Document |
 FQA9N90 Data Sheet
PDF 679.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FQA9N90-F109 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FQA9N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET |
|
| 3 | FQA9N90C-F109 |
ON Semiconductor |
N-Channel QFET MOSFET |
|
| 4 | FQA9N90C_F109 |
Fairchild Semiconductor |
MOSFET |
|
| 5 | FQA9N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |
|