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F2047 |
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| Part Number | F2047 |
| Manufacturer | Polyfet RF Devices |
| Description | Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver a... |
| Features |
gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
TM
F2047
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 5 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total Device Dissipation 30 Watts Junction to Case Thermal Resistance 6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V
o
-65 o C to 150o C
1.6 A
RF CHARACTERISTI... |
| Document |
 F2047 Data Sheet
PDF 36.04KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F2041 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 2 | F2046 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 3 | F2048 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 4 | F2049 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 5 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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