FGL60N100D |
Part Number | FGL60N100D |
Manufacturer | Fairchild Semiconductor |
Description | Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices a... |
Features |
• • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Home Appliance, Induction Heater, IH JAR, Micro Wave Oven C G TO-264 G C E TC = 25°C unless otherwise noted E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum ... |
Document |
FGL60N100D Data Sheet
PDF 438.29KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FGL60N100BNTD |
Fairchild Semiconductor |
NPT IGBT | |
2 | FGL60N170D |
Fairchild Semiconductor |
IGBT | |
3 | FGL12040WD |
Fairchild Semiconductor |
IGBT | |
4 | FGL35N120FTD |
Fairchild Semiconductor |
IGBT | |
5 | FGL40N120AN |
Fairchild Semiconductor |
1200V NPT IGBT |