M1MA152AT1 |
Part Number | M1MA152AT1 |
Manufacturer | Motorola Inc |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M1MA151AT1/D Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching ap... |
Features |
ower Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 to + 150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Symbol IR Condition VR = 35 V VR = 75 V Min — — — 40 80 Max 0.1 0.1 1.2 — — 2.0 3.0 Unit µ... |
Document |
M1MA152AT1 Data Sheet
PDF 81.69KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | M1MA152AT1 |
ON Semiconductor |
SINGLE SILICON SWITCHING DIODES | |
2 | M1MA152AT1 |
Leshan Radio Company |
Single Silicon Switching Diodes | |
3 | M1MA152KT1 |
Motorola Inc |
SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100 mA SURFACE MOUNT | |
4 | M1MA152KT1 |
ON Semiconductor |
SINGLE SILICON SWITCHING DIODES | |
5 | M1MA152KT1 |
Leshan Radio Company |
Single Silicon Switching Diodes |