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2SK662 |
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| Part Number | 2SK662 |
| Manufacturer | Panasonic Semiconductor |
| Description | Silicon Junction FETs (Small Signal) 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 s Features q High mutual conductance gm q Low noise type q S-mini type pac... |
| Features |
q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
s Absolute Maximum Ratings (Ta = 25°C)
0.2
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature
Symbol VDSX VGDO ID IG PD Tj Tstg
Ratings 30 −30 20 10 150 125 −55 to +125
Unit V V mA mA mW °C °C
1: Source 2: Drain 3: Gate
0.9±0.1
0.7±0.1
0 to 0.1
0.2±0.1
EIAJ: SC-70 S-M... |
| Document |
 2SK662 Data Sheet
PDF 33.23KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK660 |
NEC |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR |
|
| 2 | 2SK662 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 3 | 2SK663 |
Panasonic Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SK663 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 5 | 2SK664 |
Panasonic Semiconductor |
N-Channel MOSFET |
|