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2SK2553L |
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| Part Number | 2SK2553L |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition February 1999 Application High speed power switching Features • • • • Low on-resistance R DS... |
| Features |
• • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2553(L), 2SK2553(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D... |
| Document |
 2SK2553L Data Sheet
PDF 41.18KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2553 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2553S |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2550 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 4 | 2SK2551 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 5 | 2SK2552 |
Renesas |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR |
|