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2SK1821-01M |
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| Part Number | 2SK1821-01M |
| Manufacturer | Fuji Electric |
| Description | 2SK1821-01M FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 6,5Ω ... |
| Features |
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
600V
6,5Ω
2A
30W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V... |
| Document |
 2SK1821-01M Data Sheet
PDF 157.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK1821-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK1821 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK182 |
Yoshino International |
(2SK180 - 2SK183) Power FET |
|
| 4 | 2SK1822-01M |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK1823-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|