2SK1623 |
Part Number | 2SK1623 |
Manufacturer | Hitachi Semiconductor |
Description | 2SK1623(L), 2SK1623(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • ... |
Features |
• Low on-resistance • High speed switching • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK1623(L), 2SK1623(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol V(BR)DSS VGSS ID I D(pulse)* I D... |
Document |
2SK1623 Data Sheet
PDF 30.09KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | 2SK1620 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1620 |
Renesas |
Silicon N-Channel MOS FET | |
3 | 2SK1620L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1620L |
Renesas |
Silicon N-Channel MOS FET | |
5 | 2SK1620S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |