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DAN222 |
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| Part Number | DAN222 |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DAN222/D Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultr... |
| Features |
(TA = 25°C)
Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 µS 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 µA VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min — — 80 — — Max 0.1 1.2 — 3.5 4.0 Unit µAdc Vdc Vdc pF ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 DAN222 TYPICAL ELECTRICAL CHARACTERISTICS 100 IF, F... |
| Document |
 DAN222 Data Sheet
PDF 90.17KB |
| Distributor | Stock | Price | Buy |
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