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BAT60B |
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| Part Number | BAT60B |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAT 60B Silicon Schottky Diode • Rectifier Schottky diode for mobile communication • Low voltage high inductane • For power supply • For clamping and proptection in low voltage application • For detec... |
| Features |
r DC characteristics Reverse current Symbol min. Values typ. max. µA 5 10 100 410 0.24 0.3 0.4 V Unit
IR
VR = 5 V VR = 8 V
Reverse current
IR
-
VR = 5 V, TA = 80 °C VR = 8 V, TA = 80 °C
Forward voltage
VF
I F = 10 mA I F = 100 mA I F = 1000 mA
AC characteristics Diode capacitance
CT
-
20
-
pF
VR = 5 V, f = 1 MHz
Semiconductor Group Semiconductor Group
22
Sep-04-1998 1998-11-01
BAT 60B
Forward current IF = f (TA*;TS) * Package mounted on epoxy
Reverse current IR = f (TA)
VR = 8V
10 0 A 10 -1
3200
mA
2400
10 -2
TS
IR
120 °C
IF
2000
10 -3
1600 10 -4 1200
TA
10 -5
800 ... |
| Document |
 BAT60B Data Sheet
PDF 25.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAT60 |
STMicroelectronics |
SMALL SIGNAL SCHOTTKY DIODE |
|
| 2 | BAT60 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 3 | BAT60 |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 4 | BAT60A |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 5 | BAT60A |
Infineon |
Silicon Schottky Diode |
|