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Features
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F = 10 mA I F = 50 mA I F = 150 mA
Reverse current
-
-
715 855 1000 1250 1 µA
IR IR
-
VR = 75 V
Reverse current
VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C
AC characteristics Diode capacitance
-
-
30 50
CD trr
-
-
2 6
pF ns
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω,
measured at IR = 1mA
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω
Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF
Semiconductor Group Semiconductor Group
22
Mar-16-1998 1998-11-01
BAS ...
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BAS28W Data Sheet
