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VBI2658 |
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| Part Number | VBI2658 |
| Manufacturer | VBsemi |
| Description | VBI2658 P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.058 at VGS = - 10 V 0.065 at VGS = - 4.5 V ID (A)a - 6.5 - 5.5 Qg (Typ.) 30 nC D FEATURES • Tr... |
| Features |
• TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch S G GD S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and... |
| Document |
 VBI2658 Data Sheet
PDF 237.60KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB024 |
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| 2 | VB025BSP |
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| 3 | VB025SP |
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| 4 | VB026BSP |
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| 5 | VB026SP |
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