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SST8810J-C |
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| Part Number | SST8810J-C |
| Manufacturer | SeCoS |
| Description | SST8810J-C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load swi... |
| Features |
tinuous Drain Current
Pulsed Drain Current 1 Lead Temperature for Soldering Purposes @1/8’’ from case for 10s Junction and Storage Temperature Range
ID IDM TL TJ, TSTG
Thermal Data
Thermal Resistance from Junction-Ambient
RθJA
Note: 1. Repetitive rating: pulse width is limited by the junction temperature.
Rating 20 ±12 7 30 260
150, -55~150
83.3
*Dimensions in millimeters
Unit V V A A °C
°C/W
http://www.SeCoSGmbH.com/
29-Jun-2022 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3
Elektronische Bauelemente
SST8810J-C
7A, 20V, RDS(ON) 20m Dual N-Ch En... |
| Document |
 SST8810J-C Data Sheet
PDF 607.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SST8810J |
SeCoS |
N-channel MOSFET |
|
| 2 | SST8205S |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |
|
| 3 | SST85LD0128 |
SST |
NANDrive |
|
| 4 | SST85LD0256 |
Silicon Storage Technology |
NANDrive |
|
| 5 | SST85LD0512 |
Silicon Storage Technology |
NANDrive |
|