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BC327 |
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| Part Number | BC327 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | PNP Epitaxial Silicon Transistor BC327 Features Switching and Amplifier Applications Suitable for AF−Driver Stages and Low−Power Output Stages Complement to BC337/BC338 These are Pb−Free Devi... |
| Features |
Switching and Amplifier Applications Suitable for AF−Driver Stages and Low−Power Output Stages Complement to BC337/BC338 These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Value Unit VCES Collector−Emitter Voltage −50 V VCEO Collector−Emitter Voltage −45 V VEBO Emitter−Base Voltage −5 V IC Collector Current (DC) −800 mA TJ Junction Temperature 150 C TSTG Storage Temperature −55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded,... |
| Document |
 BC327 Data Sheet
PDF 203.79KB |
| Distributor | Stock | Price | Buy |
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