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RN1119MFV |
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| Part Number | RN1119MFV |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Application... |
| Features |
W
Tj
150
°C
Tstg
−55 to 150
°C
Land Pattern Dimensions (for reference only)
Unit: mm
0.5
0.45
1.15 0.4
0.45
0.4 0.4
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Der... |
| Document |
 RN1119MFV Data Sheet
PDF 144.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 2 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK |
|
| 4 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1111MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|