RN1112MFV |
Part Number | RN1112MFV |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | RN1112MFV, RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circ... |
Features |
ht: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated f... |
Document |
RN1112MFV Data Sheet
PDF 356.96KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
2 | RN1112F |
Toshiba |
Silicon NPN Epitaxial Type Transistor | |
3 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
4 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors | |
5 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK |