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RN1111MFV |
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| Part Number | RN1111MFV |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | RN1110MFV, RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1110MFV, RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circ... |
| Features |
t: 1.5 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated fa... |
| Document |
 RN1111MFV Data Sheet
PDF 356.33KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | RN1111 |
California Micro Devices Corp |
BUSSED RESISTOR NETWORK |
|
| 2 | RN1111 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 3 | RN1110 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 4 | RN1110MFV |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|
| 5 | RN1112 |
Toshiba |
Silicon NPN Epitaxial Type Transistors |
|