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1SS403E |
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| Part Number | 1SS403E |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Switching Diodes Silicon Epitaxial Planar 1SS403E 1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance... |
| Features |
(1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max)
3. Packaging and Internal Circuit
1SS403E
1: Cathode 2: Anode
ESC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
250
V
Reverse voltage
VR
200
V
Peak forward current
IFM
300
mA
Average rectified current
IO
100
mA
Non-repetitive peak forward surge current
IFSM (Note 1)
2
A
Power dissipation
PD (Note 2)
200
mW
Junction temperature
Tj
150
Storage temperatur... |
| Document |
 1SS403E Data Sheet
PDF 171.06KB |
| Distributor | Stock | Price | Buy |
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