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F20A60CT |
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| Part Number | F20A60CT |
| Manufacturer | Thinki Semiconductor |
| Description | F20C20CT thru F20C60CT ® F20C20CT thru F20C60CT Pb Pb Free Plating Product 20.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diode Features Fast switching for high efficiency Low forward v... |
| Features |
Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems
Mechanical Data Case: Heatsink TO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately
TO-220AB
.419(10.66) .387(9.85) .139(3.55)
MIN
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269... |
| Document |
 F20A60CT Data Sheet
PDF 603.29KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F20A20CT |
Thinki Semiconductor |
20.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diode |
|
| 2 | F20A40CT |
Thinki Semiconductor |
20.0 Ampere Dual Common Cathode Fast Recovery Rectifier Diode |
|
| 3 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 4 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|
| 5 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
|