1ED3140MU12F |
Part Number | 1ED3140MU12F |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | The 1ED314xMU12F gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in DSO-8 150 mil package. They provide a typical output current of up to 6.5 A... |
Features |
• Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode transient immunity CMTI > 300 kV/µs • Separate source and sink outputs with active shutdown and short circuit clamping • Galvanically isolated coreless transformer gate driver • 3.3 V and 5 V input supply voltage • Suitable for operation at high ambient temperature and in fast switching applications • UL 1577 certi... |
Document |
1ED3140MU12F Data Sheet
PDF 4.16MB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | 1ED3141MU12F |
Infineon |
Single-channel 3kV (rms) isolated gate driver | |
2 | 1ED3142MU12F |
Infineon |
Single-channel 3kV (rms) isolated gate driver | |
3 | 1ED3120MU12H |
Infineon |
Single-channel 5.7kV (rms) isolated gate driver | |
4 | 1ED3121MU12H |
Infineon |
Single-channel 5.7kV (rms) isolated gate driver | |
5 | 1ED3122MU12H |
Infineon |
Single-channel 5.7kV (rms) isolated gate driver |